PART |
Description |
Maker |
BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching Latest Silicon Discretes - Switching Diode for high speed switching Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE High Voltage Switching Diode
|
ON Semiconductor
|
CMLD2004 CMLD2004S CMLD2004A CMLD2004C CMLD2004DO |
SMD Switching Diode Dual: Common Cathode SMD Switching Diode Dual: Opposing Polarity SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
MMBD7000LT1 ON2085 |
Dual Switching Diode DUAI SWITCHING DIODE From old datasheet system
|
MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
|
CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
BAW56 Q62702-A688 BAW56-BOXREELOF3K |
ER 3C 3#12 SKT PLUG 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE INVERTER 12V-INPUT 1700V-OUTPUT Programmable Skew Clock Buffer Silicon Switching Diode Array (For high-speed switching applications Common anode)
|
SIEMENS AG Siemens Group SIEMENS[Siemens Semiconductor Group]
|
Q67040S4714 IKP04N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
FE3B FE3D FE3C |
Diode Switching 100V 3A 2-Pin Case G-4 Diode Switching 200V 3A 2-Pin Case G-4 Diode Switching 150V 3A 2-Pin Case G-4
|
New Jersey Semiconductor
|
Q67040S4717 IKW30N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极 From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|